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BD679ALEADFREE PDF预览

BD679ALEADFREE

更新时间: 2024-11-21 13:05:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 337K
描述
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

BD679ALEADFREE 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SIP
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.09
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:80 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN (315)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzBase Number Matches:1

BD679ALEADFREE 数据手册

 浏览型号BD679ALEADFREE的Datasheet PDF文件第2页 
BD675 SERIES  
www.centralsemi.com  
NPN SILICON  
POWER DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BD675 Series  
types are NPN Silicon Darlington Power Transistors,  
available in the plastic TO-126 package, and are  
designed for audio and video output applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
BD675  
BD677  
BD679  
MAXIMUM RATINGS: (T =25°C) SYMBOL BD675A BD677A BD679A BD681  
BD683  
120  
UNITS  
V
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
45  
45  
60  
60  
80  
80  
100  
100  
CBO  
CEO  
EBO  
120  
V
V
5.0  
4.0  
100  
40  
Continuous Collector Current  
Continuous Base Current  
Power Dissipation  
I
A
C
I
mA  
W
B
P
D
Operating and Storage  
Junction Temperature  
T , T  
-65 to +150  
3.13  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=Rated V  
200  
µA  
CBO  
CBO  
CEO  
EBO  
CB  
CB  
CE  
EB  
CBO  
=Rated V  
, T =100°C  
2.0  
500  
2.0  
mA  
µA  
mA  
V
CBO  
C
=½Rated V  
=5.0V  
CEO  
BV  
BV  
BV  
BV  
BV  
I =50mA (BD675, BD675A)  
45  
60  
CEO  
CEO  
C
I =50mA (BD677, BD677A)  
V
C
I =50mA (BD679, BD679A)  
80  
V
CEO  
C
I =50mA (BD681)  
100  
120  
V
CEO  
C
I =50mA (BD683)  
V
CEO  
C
V
V
V
V
I =1.5A, I =30mA (Non-A)  
2.5  
2.8  
2.5  
2.5  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
FE  
C
B
I =2.0A, I =40mA (A)  
V
C
B
V
=3.0V, I =1.5A (Non-A)  
V
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
=3.0V, I =2.0A (A)  
V
C
h
h
h
=3.0V, I =1.5A (Non-A)  
750  
750  
1.0  
C
=3.0V, I =2.0A (A)  
FE  
C
=3.0V, I =1.5A, f=1.0MHz  
fe  
C
R1 (14-June 2010)  

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