是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SIP |
包装说明: | PLASTIC PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.09 |
Is Samacsys: | N | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 1 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD679APBFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
BD679AS | ROCHESTER |
获取价格 |
4A, 80V, NPN, Si, POWER TRANSISTOR, TO-126 | |
BD679AS | ONSEMI |
获取价格 |
Medium Power NPN Darlington Bipolar Power Transistor, 2000-BLKBG | |
BD679AS | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD679AS_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
BD679ASTU | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), | |
BD679ASTU | ONSEMI |
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中等功率 NPN 达林顿双极功率晶体管 | |
BD679G | ONSEMI |
获取价格 |
Plastic Medium−Power Silicon NPN Darlingtons | |
BD680 | TRSYS |
获取价格 |
PNP DARLIGNTON POWER SILICON TRANSISTORS | |
BD680 | COMSET |
获取价格 |
SILICON DARLINGTON POWER TRANSISTORS |