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BD679AS

更新时间: 2024-11-03 13:05:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 383K
描述
Medium Power NPN Darlington Bipolar Power Transistor, 2000-BLKBG

BD679AS 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:0.54Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

BD679AS 数据手册

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BD6xxx  
Complementary power Darlington transistors  
.
Features  
Good h linearity  
FE  
High f frequency  
T
Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
1
Applications  
2
3
Linear and switching industrial equipment  
SOT-32  
Description  
The devices are manufactured in planar base  
island technology with monolithic Darlington  
configuration.  
Figure 1.  
Internal schematic diagram  
R1 typ.= 15 K  
R2 typ.= 100 Ω  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
SOT-32  
Tube  
January 2008  
Rev 5  
1/12  
www.st.com  
12  

BD679AS 替代型号

型号 品牌 替代类型 描述 数据表
BD679G ONSEMI

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2N6039G ONSEMI

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Plastic Darlington Complementary Silicon Power Transistors

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