Datasheet > BD680

BD680

更新时间： 2024-11-04 14:53:51

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
18页	502K
描述
4A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

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数据手册

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BD680 数据手册

BD676 BD682

BD678 BD684

BD680

www.centralsemi.com

SILICON

DESCRIPTION:

PNP DARLINGTON

POWER TRANSISTORS

The CENTRAL SEMICONDUCTOR BD676 series are

silicon PNP Darlington power transistors designed for

audio and video output applications.

MARKING: FULL PART NUMBER

TO-126 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL BD676 BD678 BD680 BD682 BD684 UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

5.0

4.0

6.0

100

120

°C

°C/W

CBO

CEO

EBO

T , T

-65 to +150

3.12

100

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

=Rated V

=0.6Rated V

=½Rated V

=5.0V

200

μA

CBO

CEO

EBO

CEO

CE(SAT)

BE(ON)

CBO

CBO,

CEO

T =150°C

2.0

500

5.0

I =50mA (BD676)

100

120

I =50mA (BD678)

I =50mA (BD680)

I =50mA (BD682)

I =50mA (BD684)

I =1.5A, I =6.0mA (BD676: I =2.0A)

2.5

=3.0V, I =1.5A (BD676: I =2.0A)

750

=3.0V, I =1.5A,

f=1.0MHz (BD676: I =2.0A)

=3.0V, I =1.5A (BD676: I =2.0A)

kHz

μs

(SB)

=50V, tp=20ms

0.8

1.0

=40V, tp=20ms (BD676)

=30V, I

=1.5A

=6.0mA

0.3

1.5

5.0

Con

off

Bon Boff

R1 (13-March 2014)

12 3 4 5 6 7...18

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