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BD680A PDF预览

BD680A

更新时间: 2024-11-03 06:41:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
3页 118K
描述
Silicon PNP Power Transistors

BD680A 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:NBase Number Matches:1

BD680A 数据手册

 浏览型号BD680A的Datasheet PDF文件第2页浏览型号BD680A的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
BD676A/678A/680A/682  
DESCRIPTION  
·
·With TO-126 package  
·Complement to type BD675A/677A/679A/681  
·DARLINGTON  
·High DC current gain  
APPLICATIONS  
·For medium power linear and  
switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
Absolute maximum ratings (Ta=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-45  
UNIT  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-100  
-45  
BD676A  
BD678A  
BD680A  
BD682  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
-100  
-5  
VEBO  
IC  
ICM  
IB  
Emitter -base voltage  
Collector current  
Open collector  
V
A
-4  
Collector current-Peak  
Base current  
-6  
A
-0.1  
40  
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
W
150  
-65~150  
Tstg  

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