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BD680A PDF预览

BD680A

更新时间: 2024-11-02 22:39:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管局域网
页数 文件大小 规格书
4页 113K
描述
Plastic Medium-Power Silicon PNP Darlingtons

BD680A 数据手册

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Order this document  
by BD676/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for use as output devices in complementary general–purpose amplifier applica-  
tions.  
High DC Current Gain —  
= 750 (Min) @ I = 1.5 and 2.0 Adc  
Monolithic Construction  
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,  
677, 677A, 679, 679A, 681  
h
FE  
C
BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703  
4.0 AMPERE  
DARLINGTON  
POWER TRANSISTORS  
PNP SILICON  
45, 60, 80, 100 VOLTS  
40 WATTS  
MAXIMUM RATING  
BD676  
BD678  
BD680  
BD676A BD678A BD680A  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current  
Symbol  
BD682  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
V
CEO  
45  
45  
60  
60  
80  
80  
V
100  
CB  
EB  
V
5.0  
4.0  
0.1  
I
C
Base Current  
I
B
Total Device Dissipation  
P
D
@ T = 25  
C
40  
0.32  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction T , T  
Temperating Range  
55 to +150  
C
J
stg  
CASE 77–08  
TO–225AA TYPE  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
3.13  
C/W  
JC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5.0  
0
15  
30  
45  
60  
75  
90  
105 120 135 150  
C)  
165  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Temperature Derating  
REV 7  
Motorola, Inc. 1995

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