Datasheet > BD680A

BD680A

更新时间： 2024-02-08 19:47:11

品牌	Logo	应用领域
TRSYS		晶体晶体管局域网
页数	文件大小	规格书
3页	55K
描述
PNP DARLIGNTON POWER SILICON TRANSISTORS

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中文翻译

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技术参数
数据手册

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BD680A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.92
最大集电极电流 (IC)：	4 A	配置：	DARLINGTON
最小直流电流增益 (hFE)：	750	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	40 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	10 MHz	Base Number Matches：	1

BD680A 数据手册

Transys

Electronics

I M I T E D

PNP DARLIGNTON POWER SILICON TRANSISTORS

BD676, 676A

BD678, 678A

BD680, 680A

BD682, 684

TO126

Plastic Package

For Use As Output Devices In Complementary General Purpose Amplifier Applications.

COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683

BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

BD676 BD678 BD680 BD682 BD684

BD676A BD678A BD680A

DESCRIPTION

SYMBOL TEST CONDITION

UNIT

V_CBO

V_CEO

V_EBO

I_C

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

5.0

100 120

Collector Current

4.0

I_B

Base Current

0.1

P_D

Collector Power Dissipation @ Tc=25ºC

Derate above 25ºC

Operation and Storage Junction

Temperature Range

W/ºC

ºC

0.32

-55 to +150

T_j,T_stg

THERMAL RESISTANCE

Junction to Case

R_th(j-c)

3.13

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

SYMBOL

BD676 BD678 BD680 BD682 BD684

BD676A BD678A BD680A

DESCRIPTION

TEST CONDITION

UNIT

BV_CEO* I_C=50mA, I_B=0

I_CEOV_CE=Half RatedV_CEO

I_B=0

Collector Emitter Voltage

Collector Cut off Current

>45

>60

>80 >100 >120

<500 <500 <500 <500 >120 µA

I_CBOV_CB=Rated V_CBO,I_E=0

Collector Cut off Current

<0.2

<0.2 <0.2 <0.2 mA

V_CB=Rated V_CBO,I_E=0

Ta=100ºC

I_EBOV_EB=5V,I_C=0

h_FE*

Emitter Cut off Current

DC Current Gain

I_C=1.5A, V_CE=3V

I_C=2A, V_CE=3V

NON A

<-------------- >750--------------->

<----------------- >750----------------->

12 3

中文翻译

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与BD680A相关器件

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