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BD680/A

更新时间: 2024-11-02 23:35:07
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BD680/A 数据手册

 浏览型号BD680/A的Datasheet PDF文件第2页浏览型号BD680/A的Datasheet PDF文件第3页浏览型号BD680/A的Datasheet PDF文件第4页浏览型号BD680/A的Datasheet PDF文件第5页浏览型号BD680/A的Datasheet PDF文件第6页 
BD677/A/679/A/681  
BD678/A/680/A/682  
COMPLEMENTARY SILICON  
POWER DARLINGTON TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
COMPLEMENTARY PNP - NPN DEVICES  
MONOLITHIC DARLINGTON  
CONFIGURATION  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
APPLICATION  
1
2
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
3
SOT-32  
DESCRIPTION  
The BD677, BD677A, BD679, BD679A and  
BD681 are silicon epitaxial-base NPN power  
transistors in monolithic Darlington configuration  
mounted in Jedec SOT-32 plastic package.  
They are intended for use in medium power linar  
and switching applications  
INTERNAL SCHEMATIC DIAGRAM  
The complementary PNP types are BD678,  
BD678A, BD680, BD680A and  
respectively.  
BD682  
R1 Typ.= 7K  
R2 Typ.= 230  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN BD677/A  
BD679/A  
BD681  
BD682  
100  
PNP  
BD678/A  
BD680/A  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
60  
60  
80  
V
V
80  
100  
5
V
4
A
ICM  
IB  
Collector Peak Current  
Base Current  
6
0.1  
A
A
Total Dissipation at Tc 25 oC  
Ptot  
Tstg  
Tj  
40  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
December 2000  

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