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BD681A PDF预览

BD681A

更新时间: 2024-02-26 16:01:52
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 114K
描述
SILICON DARLINGTON POWER TRANSISTORS

BD681A 技术参数

生命周期:Obsolete零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65最大集电极电流 (IC):4 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD681A 数据手册

 浏览型号BD681A的Datasheet PDF文件第2页浏览型号BD681A的Datasheet PDF文件第3页 
NPN BD675/A - BD677/A - BD679/A - BD681/A  
SILICON DARLINGTON POWER TRANSISTORS  
The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126  
plastic package.  
They are eptaxial-base transistors in monolithic Darlington circuit for audio and video  
applications.  
PNP complements are BD676/A - BD678/A - BD680/A - BD682/A  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEO  
Ratings  
Value  
Unit  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
BD675/A  
BD677/A  
BD679/A  
BD681/A  
45  
60  
80  
100  
45  
60  
80  
100  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
VCBO  
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current  
5
4
6
0.1  
40  
V
A
IC  
ICM  
IBM  
IB  
PT  
TJ  
Base current (peak value)  
Total power Dissipation  
Junction Temperature  
Storage Temperature  
A
@ Tmb = 25°C  
W
°C  
°C  
150  
-65 to +150  
TStg  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-mb  
RthJ-a  
Thermal Resistance, Junction to mouting base  
Thermal Resistance, Junction to ambient in free air  
3.12  
100  
K/W  
K/W  
23/10/2012  
COMSET SEMICONDUCTORS  
1 |3  

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