生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.65 | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD681G | ONSEMI |
获取价格 |
Plastic Medium−Power Silicon NPN Darlingtons |
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BD681LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic |
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BD681S | FAIRCHILD |
获取价格 |
NPN Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), |
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BD681S | ROCHESTER |
获取价格 |
4A, 100V, NPN, Si, POWER TRANSISTOR, TO-126 |
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BD681S | ONSEMI |
获取价格 |
中等功率 NPN 达林顿双极功率晶体管 |
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BD681S_NL | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic |
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BD681STU | FAIRCHILD |
获取价格 |
Medium Power Linear and Switching Applications |
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BD681STU | ONSEMI |
获取价格 |
中等功率 NPN 达林顿双极功率晶体管 |
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BD682 | ONSEMI |
获取价格 |
DARLINGTON POWER TRANSISTORS PNP SILICON |
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BD682 | ISC |
获取价格 |
Silicon PNP Power Transistors |
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