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BD681

更新时间: 2024-11-03 08:51:43
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TGS 晶体晶体管达林顿晶体管局域网
页数 文件大小 规格书
1页 74K
描述
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BD681 数据手册

  
TIGER ELECTRONIC CO.,LTD  
Product specification  
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS  
BD681/BD682  
DESCRIPTION  
The BD681, are silicon epitaxial-base NPN power  
transistors in monolithic Darlington configuration  
mounted in Jedec TO-126 plastic package.  
They are intended for use in medium power linar  
and switching applications  
The complementary PNP types are BD682,  
respectively.  
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value Unit  
Symbol  
VCBO  
100  
V
VCEO  
VEBO  
IC  
100  
5
V
V
4.0  
0.1  
40  
A
Base Current  
IB  
A
Total Dissipation at  
Ptot  
Tj  
W
oC  
150  
Max. Operating Junction Temperature  
Storage Temperature  
Tstg  
-55~150 oC  
O
ELECTRICAL CHARACTERISTICS  
( Ta = 25 C)  
R
Parameter  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Unit  
ICEO  
ICBO  
IEBO  
VCE=100V, IB=0  
VCB=100V, IE=0  
VEB=5V, IC=0  
0.2  
0.5  
2.0  
mA  
mA  
mA  
V
Collector-Emitter Sustaining Voltage  
DC Current Gain  
VCEO IC=50mA, IB=0  
100  
750  
hFE(1) VCE=3V, IC=1.5A  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
V
V
VCE(sat)  
VBE  
IC=1.5A,IB=30mA  
VCE=3V,IC=1.5A  
2.5  
2.5  

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