5秒后页面跳转
BD680AS PDF预览

BD680AS

更新时间: 2024-11-03 19:36:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
4页 39K
描述
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 2000/BULK

BD680AS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.15
最大集电极电流 (IC):4 A集电极-发射极最大电压:80 V
配置:DARLINGTON最小直流电流增益 (hFE):750
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):40 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BD680AS 数据手册

 浏览型号BD680AS的Datasheet PDF文件第2页浏览型号BD680AS的Datasheet PDF文件第3页浏览型号BD680AS的Datasheet PDF文件第4页 
BD676A/678A/680A/682  
Medium Power Linear and Switching  
Applications  
Medium Power Darlington TR  
Complement to BD675A, BD677A, BD679A and BD681 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
: BD676A  
- 45  
- 60  
- 80  
V
V
V
V
CBO  
: BD678A  
: BD680A  
: BD682  
- 100  
V
V
Collector-Emitter Voltage : BD676A  
- 45  
- 60  
- 80  
V
V
V
V
CEO  
: BD678A  
: BD680A  
: BD682  
- 100  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
- 5  
- 4  
V
A
EBO  
I
I
I
C
- 6  
A
CP  
B
- 100  
14  
mA  
W
P
Collector Dissipation (T =25°C)  
C
C
R
Thermal Resistance (Junction to Ambient)  
Junction Temperature  
88  
°C/W  
°C  
θja  
T
150  
J
T
Storage Temperature  
- 65 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
VCEO(sus)  
Collector-Emitter Sustaining Voltage  
: BD676A  
: BD678A  
: BD680A  
: BD682  
IC = - 50mA, IB = 0  
- 45  
- 60  
- 80  
- 100  
ICBO  
Collector-Base Voltage : BD676A  
VCB = - 45V, IE = 0  
- 200  
- 200  
- 200  
- 200  
µA  
µA  
µA  
µA  
: BD678A  
: BD680A  
: BD682  
V
CB = - 60V, IE = 0  
VCB = - 80V, IE = 0  
CB = - 100V, VBE = 0  
VCE = - 45V, VBE = 0  
V
ICEO  
Collector Cut-off Current : BD676A  
- 500  
- 500  
- 500  
- 500  
µA  
µA  
µA  
µA  
: BD678A  
: BD680A  
: BD682  
V
V
CE = - 60V, VBE = 0  
CE = - 80V, VBE = 0  
VCE = - 100V, VBE = 0  
IEBO  
hFE  
Emitter Cut-off Current  
VEB = - 5V, IC = 0  
- 2  
mA  
* DC Current Gain  
: BD676A/678A/680A  
: BD682  
* Collector-Emitter Saturation Voltage  
: BD676A/678A/680A  
VCE = - 3V, IC = - 2A  
750  
750  
VCE = - 3V, IC = - 1.5A  
VCE(sat)  
VBE(on)  
IC = - 2A, IB = - 40mA  
IC = - 1.5A, IB = - 30mA  
- 2.8  
- 2.5  
V
V
: BD682  
* Base-Emitter On Voltage : BD676A/678A/680A  
: BD682  
VCE = - 3V, IC = - 2A  
VCE = - 3V, IC = - 1.5A  
- 2.5  
- 2.5  
V
V
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulse  
©2002 Fairchild Semiconductor Corporation  
Rev. B, September 2002  

BD680AS 替代型号

型号 品牌 替代类型 描述 数据表
KSE703S FAIRCHILD

类似代替

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/
BD680 STMICROELECTRONICS

功能相似

Complementary power Darlington transistors
2N6036G ONSEMI

功能相似

Plastic Darlington Complementary Silicon Power Transistors

与BD680AS相关器件

型号 品牌 获取价格 描述 数据表
BD680ASTU ONSEMI

获取价格

暂无描述
BD680CS PANJIT

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
BD680CT PANJIT

获取价格

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
BD680G ONSEMI

获取价格

Plastic Medium−Power Silicon PNP Darlingtons
BD681 STMICROELECTRONICS

获取价格

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
BD681 FAIRCHILD

获取价格

Medium Power Linear and Switching Applications
BD681 ONSEMI

获取价格

DARLINGTON POWER TRANSISTORS NPN SILICON
BD681 COMSET

获取价格

SILICON DARLINGTON POWER TRANSISTORS
BD681 SAVANTIC

获取价格

Silicon NPN Power Transistors
BD681 ISC

获取价格

Silicon NPN Power Transistors