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BD680_2015 PDF预览

BD680_2015

更新时间: 2024-11-19 01:15:55
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锦美电子 - JMNIC /
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描述
Silicon PNP Transistors

BD680_2015 数据手册

  
Power Transistors  
www.jmnic.com  
BD680  
Silicon PNP Transistors  
Features  
E C B  
With TO-126 package  
In monolithic Darlington configuration  
This transistor is intended for use in medium  
power linar and switching applications  
Complement to type BD679  
Absolute Maximum Ratings Tc=25  
SYMBOL  
VCBO  
VCEO  
VCER  
VEB  
IB  
PARAMETER  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Emitter to base voltage  
Base Current  
RATING  
80  
UNIT  
V
80  
V
5
V
IC  
Collector current-Continuous  
4
40  
A
PD  
W
Total Power Dissipation@TC=25  
Junction temperature  
Tj  
150  
Tstg  
Storage temperature  
-55~150  
TO-126  
Electrical Characteristics Tc=25  
SYMBOL  
VCEO(SUS)  
VCBO  
PARAMETER  
Collector-Emitter Sustaining Voltage  
Collector-Base Voltage  
CONDITIONS  
MIN  
MAX  
UNIT  
IC=50mA; IB=0  
80  
V
ICEO  
Collector Cutoff Current  
VCE=40V; IB=0  
VCB=80V; IE=0  
VEB=5V; IC=0  
500  
200  
2
uA  
uA  
ICBO  
Collector Cutoff Current  
IEBO  
Emitter Cutoff Current  
mA  
VEBO  
Emitter Cutoff Current  
VCE(sat-1)  
VCE(sat-2)  
VCE(sat-3)  
hFE-1  
Collector-emitter saturation voltages  
Collector-emitter saturation voltages  
Collector-emitter saturation voltages  
Forward current transfer ratio  
Forward current transfer ratio  
Base-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain-Bandwidth Product  
IC=1.5A; IB=30mA  
IC=1.5A; VCE=3V  
2.5  
V
750  
hFE-2  
VBE(sat-1)  
VBE(sat-2)  
fT  

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