Datasheet > BD680_2015

BD680_2015

更新时间： 2024-11-04 01:15:55

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描述
Silicon PNP Transistors

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中文翻译

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数据手册

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BD680_2015 数据手册

Power Transistors

www.jmnic.com

BD680

Silicon PNP Transistors

ꢀFeatures

E C B

With TO-126 package

In monolithic Darlington configuration

This transistor is intended for use in medium

power linar and switching applications

Complement to type BD679

ꢀAbsolute Maximum Ratings Tc=25

SYMBOL

V_CBO

V_CEO

V_CER

V_EB

I_B

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Base Current

RATING

UNIT

I_C

Collector current-Continuous

P_D

Total Power Dissipation@TC=25

Junction temperature

T_j

150

T_stg

Storage temperature

-55~150

TO-126

ꢀElectrical Characteristics Tc=25

SYMBOL

V_CEO(SUS)

V_CBO

PARAMETER

Collector-Emitter Sustaining Voltage

Collector-Base Voltage

CONDITIONS

MIN

MAX

UNIT

I_C=50mA; I_B=0

I_CEO

Collector Cutoff Current

V_CE=40V; I_B=0

V_CB=80V; I_E=0

V_EB=5V; I_C=0

500

200

I_CBO

Collector Cutoff Current

I_EBO

Emitter Cutoff Current

V_EBO

Emitter Cutoff Current

V_CE(sat-1)

V_CE(sat-2)

V_CE(sat-3)

h_FE-1

Collector-emitter saturation voltages

Forward current transfer ratio

Base-Emitter Saturation Voltage

Current Gain-Bandwidth Product

I_C=1.5A; I_B=30mA

I_C=1.5A; V_CE=3V

2.5

750

h_FE-2

V_BE(sat-1)

V_BE(sat-2)

f_T

中文翻译

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