Datasheet > BD142

BD142

更新时间： 2024-11-02 08:51:11

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	39K
描述
Silicon NPN Power Transistors

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中文翻译

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BD142 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD142

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High dissipation rating

APPLICATIONS

·LF large signal power amplification

·Intended for a wide variety of intermediate

power applications.

·Suited for use in audio and inverter circuits

at 12V

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

117

℃

T_j

-65~200

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance from junction to case

MAX

UNIT

R_{th j-c}

1.5

℃/W

12 3

中文翻译

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