Datasheet > BD142_12

BD142_12

更新时间： 2024-09-25 12:53:11

品牌	Logo	应用领域
COMSET		晶体晶体管开关
页数	文件大小	规格书
2页	75K
描述
NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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BD142_12 数据手册

BD142

NPN SILICON TRANSISTOR

POWER LINERAR AND SWITCHING APPLICATIONS

LF Large Signal Power Amplification

Low Saturation Voltage

High Dissipation Rating

Intended for a wide variety of intermediate-power applications.

It is especially suited for use in audio and inverter circuits at 12 volts.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CBO

V_EBO

V_CEX

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector-Emitter Voltage

Collector Current

V_BE=-1.5 V

@ T_C= 25°

I_B

P_T

Base Current

Power Dissipation

Watts

117

T_J

T_S

Junction Temperature

Storage Temperature

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-C

Thermal Resistance, Junction to Case

1.5

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

V_CEO(BR)

V_CEX(BR)

V_CE(SAT)

I_CEX

I_EBO

V_BE

Collector-Emitter Breakdown Voltage (*) I_C=200 mA, I_B=0

Collector-Emitter Breakdown Voltage (*) I_C=100 mA, V_BE=-1.5 V

Collector-Emitter Saturation Voltage (*)

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

I_C=4 A, I_B=0.4 A

V_CE= 40 V, V_BE=-1.5 V

V_EB=7 V

1.1

1.5

160

Base-Emitter Voltage (*)

Second Breakdown collector current

I_C=4.0 A, V_CE=4.0V

t=1s, V_CE=39 V

I_S/B

V_CE=4.0 V, I_C=4.0 A

V_CE=4.0 V, I_C=0.5 A

12.5

h_FE

Static Forward Current Transfer Ratio (*)

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

18/10/2012 COMSET SEMICONDUCTORS

1/2

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