Datasheet > BD158

BD158

更新时间： 2024-09-25 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	216K
描述
Silicon NPN Power Transistor

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数据手册

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BD158 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD158

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= 300V(Min)

·DC Current Gain-

: h_FE= 30~240(Min) @ I_C= 50mA

APPLICATIONS

·Designed for power output stages for television, radio,

phonograph and other consumer product applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

325

UNIT

300

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.5

I_CM

1.0

I_B

0.25

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

T_i

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

6.25

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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