BD159

更新时间： 2024-01-09 00:51:17

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管开关局域网
页数	文件大小	规格书
4页	104K
描述
Plastic Medium Power NPN Silicon Transistor

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数据手册

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BD159 数据手册

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by BD157/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for power output stages for television, radio, phonograph and other

consumer product applications.

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

250–300–350 VOLTS

20 WATTS

•

Suitable for Transformerless, Line–Operated Equipment

Thermopad Construction Provides High Power Dissipation Rating for High

Reliability

MAXIMUM RATINGS

Rating

Symbol BD 157 BD 158 BD 159

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

250

275

300

325

5.0

350

375

CEO

Collector Current — Continuous

Peak

0.5

1.0

Base Current

0.25

Adc

Total Device Dissipation @ T = 25 C

Derate above 25 C

0.16

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

J stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

CASE 77–08

TO–225AA TYPE

Symbol

Max

Unit

Thermal Resistance, Junction to Case

6.25

C/W

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

Symbol

Type

Min

Max

Unit

BD 157

BD 158

BD 159

250

300

350

—

Vdc

CEO

(I = 1.0 mAdc, I = 0)

Collector Cutoff Current

(At rated voltage)

—

100

µAdc

CBO

Emitter Cutoff Current

EBO

—

= 5.0 Vdc, I = 0)

ON CHARACTERISTICS

DC Current Gain

(I = 50 mAdc, V

C CE

240

—

= 10 Vdc)

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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