Datasheet > BD159_06

BD159_06

更新时间： 2024-09-25 08:51:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	57K
描述
Plastic Medium Power NPN Silicon Transistor

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中文翻译

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数据手册

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BD159_06 数据手册

BD159

Plastic Medium Power

NPN Silicon Transistor

This device is designed for power output stages for television, radio,

phonograph and other consumer product applications.

http://onsemi.com

Features

• Suitable for Transformerless, Line−Operated Equipment

0.5 AMPERE

POWER TRANSISTOR

NPN SILICON

• Thermopadt Construction Provides High Power Dissipation Rating

for High Reliability

• Pb−Free Package is Available*

350 VOLTS, 20 WATTS

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

350

Unit

Vdc

Adc

CEO

375

TO−225

CASE 77

STYLE 1

5.0

Collector Current − Continuous

− Peak

0.5

1.0

Base Current

0.25

Adc

Total Power Dissipation @ T = 25_C

0.16

Derate above 25_C

mW/_C

MARKING DIAGRAM

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

YWW

BD159G

Thermal Resistance, Junction−to−Case

6.25

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

= Year

= Work Week

BD159 = Device Code

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

BD159

TO−225

500 Units/Box

TO−225

BD159G

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 4

BD159/D

12 3

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