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BD159/D PDF预览

BD159/D

更新时间: 2024-02-12 19:40:08
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
4页 44K
描述
Plastic Medium Power NPN Silicon Transistor

BD159/D 技术参数

是否无铅: 不含铅生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95Factory Lead Time:1 week
风险等级:5.24最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:50 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BD159/D 数据手册

 浏览型号BD159/D的Datasheet PDF文件第2页浏览型号BD159/D的Datasheet PDF文件第3页浏览型号BD159/D的Datasheet PDF文件第4页 
ON Semiconductort  
Plastic Medium Power NPN  
Silicon Transistor  
BD159  
. . . designed for power output stages for television, radio,  
phonograph and other consumer product applications.  
0.5 AMPERE  
POWER TRANSISTOR  
NPN SILICON  
350 VOLTS  
Suitable for Transformerless, Line–Operated Equipment  
Thermopadt Construction Provides High Power Dissipation Rating for  
High Reliability  
20 WATTS  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Max  
350  
375  
5.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CB  
V
EB  
Collector Current — Continuous  
Peak  
I
C
0.5  
1.0  
Base Current  
I
B
0.25  
Adc  
Total Device Dissipation @ T = 25_C  
P
20  
0.16  
Watts  
W/_C  
_C  
C
D
Derate above 25_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 77–09  
TO–225AA TYPE  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
6.25  
_C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
BV  
350  
Vdc  
µAdc  
µAdc  
CEO  
(I = 1.0 mAdc, I = 0)  
C
B
Collector Cutoff Current  
(At rated voltage)  
I
100  
100  
CBO  
Emitter Cutoff Current  
I
EBO  
(V = 5.0 Vdc, I = 0)  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
30  
240  
(I = 50 mAdc, V = 10 Vdc)  
C
CE  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BD159/D  

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