生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.45 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-225AA | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 20 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD1571KN | ROHM |
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Consumer Circuit, ROHS COMPLIANT, VQFN-36 | |
BD1571KN-E2 | ROHM |
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Image Correction IC for Camera | |
BD157STU | FAIRCHILD |
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Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
BD158 | ISC |
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Silicon NPN Power Transistor | |
BD158 | FAIRCHILD |
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Low Power Fast Switching Output Stages | |
BD158 | MOTOROLA |
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Plastic Medium Power NPN Silicon Transistor | |
BD158STU | FAIRCHILD |
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Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
BD159 | MOTOROLA |
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Plastic Medium Power NPN Silicon Transistor | |
BD159 | ISC |
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Silicon NPN Power Transistor | |
BD159 | ONSEMI |
获取价格 |
POWER TRANSISTOR NPN SILICON |