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BD157 PDF预览

BD157

更新时间: 2024-09-24 22:39:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 104K
描述
Plastic Medium Power NPN Silicon Transistor

BD157 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.45Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:20 W认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BD157 数据手册

 浏览型号BD157的Datasheet PDF文件第2页浏览型号BD157的Datasheet PDF文件第3页浏览型号BD157的Datasheet PDF文件第4页 
Order this document  
by BD157/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for power output stages for television, radio, phonograph and other  
consumer product applications.  
0.5 AMPERE  
POWER TRANSISTORS  
NPN SILICON  
250300350 VOLTS  
20 WATTS  
Suitable for Transformerless, Line–Operated Equipment  
Thermopad Construction Provides High Power Dissipation Rating for High  
Reliability  
MAXIMUM RATINGS  
Rating  
Symbol BD 157 BD 158 BD 159  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
250  
275  
300  
325  
5.0  
350  
375  
CEO  
V
CB  
EB  
V
Collector Current — Continuous  
Peak  
I
C
0.5  
1.0  
Base Current  
I
B
0.25  
Adc  
Total Device Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
20  
0.16  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
THERMAL CHARACTERISTICS  
Characteristic  
CASE 77–08  
TO–225AA TYPE  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
θ
6.25  
C/W  
JC  
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
Symbol  
Type  
Min  
Max  
Unit  
BV  
BD 157  
BD 158  
BD 159  
250  
300  
350  
Vdc  
CEO  
(I = 1.0 mAdc, I = 0)  
C
B
Collector Cutoff Current  
(At rated voltage)  
I
100  
100  
µAdc  
µAdc  
CBO  
Emitter Cutoff Current  
I
EBO  
(V  
EB  
= 5.0 Vdc, I = 0)  
C
ON CHARACTERISTICS  
DC Current Gain  
(I = 50 mAdc, V  
C CE  
h
FE  
30  
240  
= 10 Vdc)  
REV 7  
Motorola, Inc. 1995

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