Datasheet > BD157

BD157

更新时间： 2024-09-25 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	216K
描述
Silicon NPN Power Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BD157 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD157

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= 250V(Min)

·DC Current Gain-

: h_FE= 30~240(Min) @ I_C= 50mA

APPLICATIONS

·Designed for power output stages for television, radio,

phonograph and other consumer product applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

275

UNIT

250

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

0.5

I_CM

1.0

I_B

0.25

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

T_i

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

6.25

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

下载PDF

与BD157相关器件

型号	品牌	获取价格	描述	数据表
BD1571KN	ROHM	获取价格	Consumer Circuit, ROHS COMPLIANT, VQFN-36
BD1571KN-E2	ROHM	获取价格	Image Correction IC for Camera
BD157STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
BD158	ISC	获取价格	Silicon NPN Power Transistor
BD158	FAIRCHILD	获取价格	Low Power Fast Switching Output Stages
BD158	MOTOROLA	获取价格	Plastic Medium Power NPN Silicon Transistor
BD158STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
BD159	MOTOROLA	获取价格	Plastic Medium Power NPN Silicon Transistor
BD159	ISC	获取价格	Silicon NPN Power Transistor
BD159	ONSEMI	获取价格	POWER TRANSISTOR NPN SILICON