BCP56T1G

更新时间： 2024-11-23 12:52:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	160K
描述
NPN Silicon Epitaxial Transistor

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BCP56T1G 数据手册

BCP56 Series,

SBCP56 Series

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT−223

package, which is designed for medium power surface mount

applications.

http://onsemi.com

MEDIUM POWER NPN SILICON

HIGH CURRENT TRANSISTOR

SURFACE MOUNT

Features

• High Current: 1.0 A

• The SOT−223 package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

COLLECTOR 2,4

• Available in 12 mm Tape and Reel

Use BCP56T1 to Order the 7 inch/1000 Unit Reel

Use BCP56T3 to Order the 13 inch/4000 Unit Reel

• PNP Complement is BCP53T1

BASE

EMITTER 3

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Symbol

Value

Unit

Vdc

Adc

SOT−223

CASE 318E

STYLE 1

CEO

CBO

EBO

100

MARKING DIAGRAM

Total Power Dissipation

@ T = 25°C (Note 1)

Derate above 25°C

1.5

mW/°C

AYW

xxxxxG

Operating and Storage

Temperature Range

T , T

−65 to 150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Thermal Resistance,

Junction−to−Ambient

(surface mounted)

83.3

°C/W

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

(Note: Microdot may be in either location)

260

°C

Sec

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x

1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

Publication Order Number:

November, 2011 − Rev. 8

BCP56T1/D

12 3 4 5 6

中文翻译

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BCP56T1G 替代型号

型号	品牌	替代类型	描述	数据表
BCP56-16T3	ONSEMI	完全替代	NPN Silicon Epitaxial Transistor
BCP56T3G	ONSEMI	类似代替	NPN Silicon Epitaxial Transistor
BCP56-10T1G	ONSEMI	类似代替	NPN Silicon Epitaxial Transistor

与BCP56T1G相关器件

型号	品牌	获取价格	描述	数据表
BCP56T1SERIES	MOTOROLA	获取价格	MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
BCP56T3	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56T3G	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56TA	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP56-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TF	ETC	获取价格	BCP56T/SOT223/SC-73
BCP56T-Q	NEXPERIA	获取价格	80 V, 1 A NPN medium power transistorsProduction
BCP56TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4

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