Datasheet > BCP56T-Q

BCP56T-Q

更新时间： 2024-11-06 11:13:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	282K
描述
80 V, 1 A NPN medium power transistorsProduction

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BCP56T-Q 数据手册

BCP56T-Q series

80 V, 1 A NPN medium power transistors

Rev. 2 — 29 June 2022

Product data sheet

1. General description

NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device

(SMD) plastic package.

Table 1. Product overview

Type number

Package

Nexperia

SOT223

NPN comlement

JEDEC

BCP56T-Q

SC-73

BCP53T-Q

BCP56-10T-Q

BCP56-16T-Q

BCP53-10T-Q

BCP53-16T-Q

2. Features and benefits

•

High collector current capability I_Cand I_CM

Three current gain selections

High power dissipation capability

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

MOSFET drivers

High-side switches

Power management

Amplifiers

4. Quick reference data

Table 2. Quick reference data

T_amb= 25 °C unless otherwise specified.

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BCP56T-Q

open base

I_CM

single pulse; t_p≤ 1 ms

V_CE= 2 V; I_C= 150 mA

h_FE

[1]

250

160

250

BCP56-10T-Q

BCP56-16T-Q

100

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...15

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