Datasheet > BCP68

BCP68

更新时间： 2024-11-05 12:53:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	185K
描述
High current. Three current gain selections. 1.4 W total power dissipation.

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BCP68 数据手册

SSMMDD TTyyppee

TransistIoCrs

Product specification

BCP68

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

High current.

+0.2

0.90

-0.2

Three current gain selections.

1.4 W total power dissipation.

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector current (DC)

Peak collector current

Peak base current

I^CM

I^BM

200

Total power dissipation

* 1

* 2

* 3

0.625

P^tot

1.4

Storage temperature

T^stg

^Tj

-65 to +150

150

Junction temperature

Operating ambient temperature

Thermal resistance from junction to ambient *

T^amb25

T^amb

-65 to +150

200

125

K/W

* 1

R^th(j-a)

* 2

* 3

Thermal resistance from junction to solder point

R^th(j-s)

*1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm²collector mounting pad.

*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm²collector,mounting pad.

4008-318-123

http://www.twtysemi.com

1 of 2

sales@twtysemi.com

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