Datasheet > BCP68

BCP68

更新时间： 2024-11-06 14:49:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	549K
描述
SOT-223

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数据手册

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BCP68 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

BCP68 TRANSISTOR (NPN)

SOT-223

FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary type: BCP69 (PNP)

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

P_C

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55~+150

℃

R_θJA

Thermal Resistance Junction to Ambient

℃/W

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=100μA ,I_C=0

I_CBO

I_EBO

V_CB=25V,I_E=0

0.1

μA

Emitter cut-off current

V_EB=5V,I_C=0

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE1

V_BE2

f_T

V_CE=1V,I_C=500mA

V_CE=1V,I_C=1A

375

DC current gain

V_CE=10V,I_C=5mA

I_C=1A,I_B=100mA

V_CE=10V,I_C=5mA

V_CE=1V,I_C=1A

Collector-emitter saturation voltage

Base-emitter voltage

0.5

0.68

Transition frequency

V_CE=5V,I_C=10mA,f=100MHz

V_CB=5V,I_E=0,f=1MHz

MHz

Collector output capacitance

CLASSIFICATION OF h_FE(1)

C_ob

BCP68-10

85-160

BCP68-16

100-250

BCP68-25

160-375

Rank

Range

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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