Datasheet > BCP68

BCP68

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	516K
描述
SOT-223

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BCP68 数据手册

BCP68

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to BCP69

 High collector current

 High current gain

 Low collector-emitter saturation voltage

 For general AF applications

 Surface Mount device

SOT-223

MECHANICAL DATA



Case: SOT-223

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.04 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

150

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

°C/W

°C

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100uA，I_E=0

I_C=1mA，I_B=0

V(BR)CEO

V(BR)EBO

I_CBO

I_E=100uA，I_C=0

V_CB=25V, I_E=0

V_EB=5V, I_C=0

V_CE=1V, I_C=500mA

V_CE=1V, I_C=1A

V_CE=10V, I_C=5mA

I_C=1A，I_B=10mA

V_CE=10V,I_C=5mA

V_CE=1V,I_C=1A

0.1

375

Emitter cut-off current

I_EBO

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

0.5

0.68

V_CE=5V,I_C=10mA,f=100

Transition frequency

f_T

MHz

V_CB=5V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

Marking

BCP68-10

85-160

BCP68-16

100-250

BCP68-25

160-375

BCP68-10

BCP68-16

BCP68-25

1 / 5

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E-mail:hkt@heketai.com

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