生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.02 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP68-16-AA3-R | UTC |
获取价格 |
Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 | |
BCP68-16E6327 | INFINEON |
获取价格 |
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 3 Pin | |
BCP68-16E6433 | INFINEON |
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Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 3 Pin | |
BCP68-16T/R | NXP |
获取价格 |
TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP68-16-TAPE-13 | NXP |
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TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP68-16-TAPE-7 | NXP |
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TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP6825 | ETC |
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BCP68-25 | INFINEON |
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NPN Silicon AF Transistor (For general AF application High collector current High current | |
BCP68-25 | ZETEX |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
BCP68-25 | TYSEMI |
获取价格 |
High current. Three current gain selections. 1.4 W total power dissipation. |