BCP68-16

更新时间： 2024-11-04 22:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	140K
描述
NPN Silicon AF Transistor (For general AF application High collector current High current gain)

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数据手册

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BCP68-16 数据手册

NPN Silicon AF Transistor

BCP 68

● For general AF application

● High collector current

● High current gain

● Low collector-emitter saturation voltage

● Complementary type: BCP 69 (PNP)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BCP 68

Q62702-C2126

SOT-223

BCP 68-10

BCP 68-16

BCP 68-25

BCP 68-10 Q62702-C2127

BCP 68-16 Q62702-C2128

BCP 68-25 Q62702-C2129

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

CE0

CES

Collector-base voltage

Emitter-base voltage

Collector current

CB0

EB0

Peak collector current

Base current

100

200

1.5

150

Peak base current

Total power dissipation, T

Junction temperature

= 124 ˚C²⁾

tot

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 72

≤ 17

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

01.97

Semiconductor Group

12 3 4

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