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BCP56-10T1G PDF预览

BCP56-10T1G

更新时间： 2024-02-17 03:10:24
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管光电二极管放大器PC
页数 文件大小 规格书
5页 161K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

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BCP56-10T1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-261AA
包装说明：HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN针数：4
Reach Compliance Code：unknown风险等级：5.01
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：80 V配置：SINGLE
最小直流电流增益 (hFE)：63JEDEC-95代码：TO-261AA
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：4封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：130 MHzBase Number Matches：1

BCP56-10T1G 数据手册

 浏览型号BCP56-10T1G的Datasheet PDF文件第2页浏览型号BCP56-10T1G的Datasheet PDF文件第3页浏览型号BCP56-10T1G的Datasheet PDF文件第4页浏览型号BCP56-10T1G的Datasheet PDF文件第5页 
BCP56 Series,  
SBCP56 Series  
NPN Silicon  
Epitaxial Transistor  
These NPN Silicon Epitaxial transistors are designed for use in  
audio amplifier applications. The device is housed in the SOT−223  
package, which is designed for medium power surface mount  
applications.  
http://onsemi.com  
MEDIUM POWER NPN SILICON  
HIGH CURRENT TRANSISTOR  
SURFACE MOUNT  
Features  
• High Current: 1.0 A  
• The SOT−223 package can be soldered using wave or reflow. The  
formed leads absorb thermal stress during soldering, eliminating the  
possibility of damage to the die  
COLLECTOR 2,4  
• Available in 12 mm Tape and Reel  
Use BCP56T1 to Order the 7 inch/1000 Unit Reel  
Use BCP56T3 to Order the 13 inch/4000 Unit Reel  
• PNP Complement is BCP53T1  
BASE  
1
EMITTER 3  
4
• AEC−Q101 Qualified and PPAP Capable  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
SOT−223  
CASE 318E  
STYLE 1  
V
CEO  
V
CBO  
V
EBO  
100  
5
MARKING DIAGRAM  
I
C
1
Total Power Dissipation  
P
D
@ T = 25°C (Note 1)  
Derate above 25°C  
1.5  
12  
W
mW/°C  
A
AYW  
xxxxxG  
G
Operating and Storage  
Temperature Range  
T , T  
−65 to 150  
°C  
J
stg  
1
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
xx  
A
Y
W
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Thermal Resistance,  
Junction−to−Ambient  
(surface mounted)  
R
83.3  
°C/W  
q
JA  
Maximum Temperature for  
Soldering Purposes  
Time in Solder Bath  
T
L
(Note: Microdot may be in either location)  
260  
10  
°C  
Sec  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x  
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 8  
BCP56T1/D  
 
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中文翻译

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BCP56-10T1G 替代型号

型号 品牌 替代类型 描述 数据表
BCP56-16T3 ONSEMI

完全替代

 NPN Silicon Epitaxial Transistor
BCP56T1G ONSEMI

类似代替

 NPN Silicon Epitaxial Transistor
BCP56-16T3G ONSEMI

类似代替

 NPN Silicon Epitaxial Transistor

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