Datasheet > BCP56T3

BCP56T3

更新时间： 2024-11-04 21:54:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	81K
描述
NPN Silicon Epitaxial Transistor

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中文翻译

获取价格

数据手册
替代型号

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BCP56T3 数据手册

BCP56T1 Series

Preferred Devices

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT-223

package, which is designed for medium power surface mount

applications.

http://onsemi.com

Features

MEDIUM POWER NPN SILICON

HIGH CURRENT TRANSISTOR

SURFACE MOUNT

• Pb−Free Package is Available

• High Current: 1.0 Amp

• The SOT-223 package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

COLLECTOR 2,4

• Available in 12 mm Tape and Reel

Use BCP56T1 to order the 7 inch/1000 unit reel

Use BCP56T3 to order the 13 inch/4000 unit reel

BASE

• PNP Complement is BCP53T1

EMITTER

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

Unit

Vdc

Adc

CEO

CBO

EBO

SOT−223

CASE 318E

STYLE 1

100

Total Power Dissipation

@ T = 25°C (Note 1)

Derate above 25°C

1.5

Watts

mW/°C

MARKING DIAGRAM

Operating and Storage

Temperature Range

T , T

−65 to 150

°C

stg

AWW

xxxx

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

xxxx

= Specific Device Code

= Assembly Location

= Work Week

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Thermal Resistance

Junction−to−Ambient

(surface mounted)

83.3

°C/W

Preferred devices are recommended choices for future use

and best overall value.

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in x

1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 3

BCP56T1/D

12 3 4

中文翻译

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BCP56T3 替代型号

型号	品牌	替代类型	描述	数据表
BCP56T1G	ONSEMI	类似代替	NPN Silicon Epitaxial Transistor
BCP56-16T3G	ONSEMI	类似代替	NPN Silicon Epitaxial Transistor
BCP56-10T1G	ONSEMI	类似代替	NPN Silicon Epitaxial Transistor

与BCP56T3相关器件

型号	品牌	获取价格	描述	数据表
BCP56T3G	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56TA	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP56-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TF	ETC	获取价格	BCP56T/SOT223/SC-73
BCP56T-Q	NEXPERIA	获取价格	80 V, 1 A NPN medium power transistorsProduction
BCP56TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TRL	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos
BCP56TRL13	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4

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