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BCP56T1SERIES

更新时间： 2024-11-04 23:34:55

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	203K
描述
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

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BCP56T1SERIES 数据手册

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by BCP56T1/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier

applications. The device is housed in the SOT-223 package, which is designed for

medium power surface mount applications.

MEDIUM POWER

NPN SILICON

•

High Current: 1.0 Amp

HIGH CURRENT

TRANSISTOR

SURFACE MOUNT

The SOT-223 package can be soldered using wave or reflow. The formed leads

absorb thermal stress during soldering, eliminating the possibility of damage to

the die

•

Available in 12 mm Tape and Reel

Use BCP56T1 to order the 7 inch/1000 unit reel

Use BCP56T3 to order the 13 inch/4000 unit reel

COLLECTOR 2,4

PNP Complement is BCP53T1

BASE

CASE 318E-04, STYLE 1

TO-261AA

EMITTER 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

Adc

CEO

CBO

EBO

100

Emitter-Base Voltage

Collector Current

(1)

Total Power Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Temperature Range

DEVICE MARKING

T , T

–65 to 150

°C

stg

BCP56T1 = BH

BCP56-10T1 = BK

BCP56-16T1 = BL

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance

Junction-to-Ambient (surface mounted)

83.3

°C/W

θJA

Maximum Temperature for Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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BCP56-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
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BCP56T-Q	NEXPERIA	获取价格	80 V, 1 A NPN medium power transistorsProduction
BCP56TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TRL	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos