Datasheet > BCP56T1/D

BCP56T1/D

更新时间： 2024-11-04 23:34:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	97K
描述
NPN Silicon Epitaxial Transistor

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数据手册

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BCP56T1/D 数据手册

BCP56T1 Series

Preferred Devices

NPN Silicon

Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in

audio amplifier applications. The device is housed in the SOT-223

package, which is designed for medium power surface mount

applications.

http://onsemi.com

• High Current: 1.0 Amp

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

• The SOT-223 package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

• Available in 12 mm Tape and Reel

Use BCP56T1 to order the 7 inch/1000 unit reel

Use BCP56T3 to order the 13 inch/4000 unit reel

SURFACE MOUNT

• PNP Complement is BCP53T1

COLLECTOR 2,4

• Device Marking

BCP56T1–10 = BH

BCP56–10T1 = BH–10

BCP56–16T1 = BH–16

BASE

EMITTER

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Value

Unit

Vdc

Adc

CEO

CBO

EBO

MARKING DIAGRAM

100

BHxxx

Total Power Dissipation

CASE 318E

TO–261AA

STYLE 1

@ T = 25°C (Note 1.)

1.5

Watts

mW/°C

BHxxx = Device Code

Derate above 25°C

xxx

= –10 or –16

Operating and Storage

Temperature Range

T , T

–65 to 150

°C

stg

ORDERING INFORMATION

THERMAL CHARACTERISTICS

Characteristic

Device

Package

SOT–223

Shipping

Symbol

Max

Unit

Thermal Resistance

Junction-to-Ambient

(surface mounted)

83.3

°C/W

BCP56T1

1000/Tape & Reel

4000/Tape & Reel

1000/Tape & Reel

4000/Tape & Reel

BCP56T3

Maximum Temperature for

Soldering Purposes

Time in Solder Bath

BCP56–10T1

BCP56–16T1

BCP56–16T3

260

°C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x

1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

September, 2000 – Rev. 2

BCP56T1/D

12 3 4 5 6 7 8

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与BCP56T1/D相关器件

型号	品牌	获取价格	描述	数据表
BCP56T1G	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56T1SERIES	MOTOROLA	获取价格	MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
BCP56T3	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56T3G	ONSEMI	获取价格	NPN Silicon Epitaxial Transistor
BCP56TA	DIODES	获取价格	NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP56-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 80 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP56TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP56TF	ETC	获取价格	BCP56T/SOT223/SC-73
BCP56T-Q	NEXPERIA	获取价格	80 V, 1 A NPN medium power transistorsProduction