Datasheet > BC847QAS

BC847QAS

更新时间： 2024-02-18 21:53:13

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
4页	1355K
描述
SMALL SIGNAL TRANSISTOR

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中文翻译

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技术参数
数据手册

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BC847QAS 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-N6	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.28
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	45 V	配置：	SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)：	200	JESD-30 代码：	R-PDSO-N6
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
参考标准：	AEC-Q101; IEC-60134	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	NO LEAD
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BC847QAS 数据手册

Small & Powerful

NXP MOSFETs and

bipolar transistors

in DFN1010

First 3 A transistors in a 1.1 mm²

leadless plastic package

This new product series, housed in tiny leadless packages and ideal for use in tight-

footprint power management and load switches, includes small yet powerful high-P_tot

MOSFETs as well as bipolar transistors with benchmark values for R_DSonand V_CEsat

KEY FEATURES

KEY APPLICATIONS

Single and dual MOSFETs (N-ch/P-ch)

` Low R_DSondown to 34 mΩ

` Portable, mobile, and automotive applications that requires

small-footprint solutions

` I_Dup to 3.2 A

` Power management

` Low voltage drive (V_GS(th)= 0.65 V typ.)

` Voltage range of 12 to 80 V

` ESD protection of more than 1 kV

` Charging circuits

` Power switches (motors, fans, etc.)

` Level shifting

` LED lighting (automotive matrix light, etc.)

Single bipolar transistors

` Low V_CEsatvalues down to 70 mV

` Collector current (I_C) up to 2 A

` Peak collector current (ICM) up to 3 A

` V_CEOof 30 and 60 V

DFN1010 package

` Ultra-small and ﬂat package (1.1 x 1 x 0.37 mm)

` Single and dual conﬁgurations (smallest package for dual

transistors)

` AEC-Q101 qualiﬁed

` Power dissipation (P_tot) of 1 W (DFN1010D-3)

` Single package with tin-plated, solderable side pads for

improved mounting and automotive conformity

Dual NPN/PNP resistor-equipped (digital) transistor

` 100 mA, R1=R2=47 kΩ

` AEC-Q101 qualiﬁed

Single and dual general-purpose transistors

12 3 4

中文翻译

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