Datasheet > BC847S-C

BC847S-C

更新时间： 2024-11-02 01:15:07

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描述
General Purpose Transistors

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数据手册

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BC847S-C 数据手册

SEMICONDUCTOR

BC846S ~BC850S

TECHNICAL DATA

General Purpose Transistors

NPN Silicon

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: >4000 V

– Machine Model: >400 V

MAXIMUM RATINGS

SOT–23

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

CEO

CBO

EBO

Vdc

BC846

BC847, BC850

BC848, BC849

COLLECTOR

Collector–Base Voltage

Vdc

BC846

BC847, BC850

BC848, BC849

BASE

Emitter–Base Voltage

BC846

BC847, BC850

BC848, BC849

6.0

5.0

EMITTER

Collector Current – Continuous

100

mAdc

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

xx= Device Marking

(See Table Below)

Total Device Dissipation FR–5 Board

(Note 1.)

225

= 25°C

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient (Note 1.)

556

Total Device Dissipation

Alumina Substrate (Note 2.)

300

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance,

Junction to Ambient (Note 2.)

417

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

1. FR–5 = 1.0 x 0.75 x 0.062 in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2008. 01. 18

Revision No : 0

1/6

12 3 4 5 6

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