生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
Reach Compliance Code: | compliant | 风险等级: | 5.54 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 45 V |
配置: | SEPARATE, 2 ELEMENTS | 最小直流电流增益 (hFE): | 110 |
JESD-30 代码: | R-PDSO-G6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCM847BS,115 | NXP |
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BCM847BV; BCM847BS; BCM847DS - NPN/NPN matched double transistors TSSOP 6-Pin |
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