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BC847SQ62702C2372 PDF预览

BC847SQ62702C2372

更新时间: 2024-11-25 23:34:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
6页 158K
描述
TRANSISTOR SOT363

BC847SQ62702C2372 数据手册

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BC 847S  
NPN Silicon AF Transistor Array  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two ( galvanic) internal isolated Transistors  
with high matching in one package  
Type  
Marking Ordering Code  
1Cs Q62702-C2372  
Pin Configuration  
1/4=E1/E2 2/5=B1/B2  
Package  
3/6=C2/C1  
BC 847S  
SOT-363  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
V
V
V
V
45  
50  
V
CEO  
CBO  
CES  
EBO  
50  
6
I
I
100  
mA  
C
200  
CM  
250  
mW  
°C  
Total power dissipation, T = 115 °C  
P
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
- 65...+150  
stg  
Thermal Resistance  
Junction ambient 1)  
R
R
275  
140  
K/W  
thJA  
Junction - soldering point  
thJS  
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
May-12-1998  

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