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BC847UB

更新时间: 2024-11-26 20:06:03
品牌 Logo 应用领域
可天士 - KODENSHI /
页数 文件大小 规格书
4页 262K
描述
Transistor,

BC847UB 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):200最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
子类别:Other Transistors表面贴装:YES

BC847UB 数据手册

 浏览型号BC847UB的Datasheet PDF文件第2页浏览型号BC847UB的Datasheet PDF文件第3页浏览型号BC847UB的Datasheet PDF文件第4页 
BC847U  
NPN Silicon Transistor  
Descriptions  
PIN Connection  
General purpose application  
Switching application  
3
Features  
High voltage : VCEO=45V  
Complementary pair with BC857U  
1
2
Ordering Information  
SOT-323  
Type NO.  
Marking  
Package Code  
CS □ □  
① ② ③  
BC847U  
SOT-323  
Device Code hFE Rank Year&Week Code  
Absolute maximum ratings  
(Ta=25°C)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
50  
Unit  
Collector-Base voltage  
V
V
Collector-Emitter voltage  
Emitter-base voltage  
Collector current  
45  
5
V
100  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
200  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
(Ta=25°C)  
Symbol  
BVCEO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Emitter breakdown voltage  
Base-Emitter turn on voltage  
Base-Emitter saturation voltage  
Collector-Emitter saturation voltage  
Collector cut-off current  
IC=1mA, IB=0  
45  
550  
-
-
-
V
VBE(ON)  
VBE(sat)  
VCE(sat)  
ICBO  
VCE=5V, IC=2mA  
IC=100mA, IB=5mA  
IC=100mA, IB=5mA  
VCB=35V, IE=0  
-
700  
-
mV  
mV  
mV  
nA  
-
900  
-
-
-
-
600  
15  
-
*
DC current gain  
VCE=5V, IC=2mA  
110  
800  
hFE  
VCE=5V, IC=10mA  
f=100MHz  
Transition frequency  
Collector output capacitance  
Noise figure  
fT  
-
-
-
150  
-
MHz  
pF  
Cob  
NF  
VCB=10V, IE=0, f=1MHz  
-
-
4.5  
10  
VCE=5V, IC=200μA,  
f=1KHz, Rg=2KΩ  
dB  
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800  
KSD-T5D030-000  
1

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