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BC847SE6327 PDF预览

BC847SE6327

更新时间: 2024-11-26 21:11:47
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
10页 844K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon,

BC847SE6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.28
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

BC847SE6327 数据手册

 浏览型号BC847SE6327的Datasheet PDF文件第2页浏览型号BC847SE6327的Datasheet PDF文件第3页浏览型号BC847SE6327的Datasheet PDF文件第4页浏览型号BC847SE6327的Datasheet PDF文件第5页浏览型号BC847SE6327的Datasheet PDF文件第6页浏览型号BC847SE6327的Datasheet PDF文件第7页 
BC846S/ BC846U/ BC847S  
NPN Silicon AF Transistor Arrays  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated transistors  
with good matching in one package  
BC846S / U, BC847S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BC846S  
BC846U  
BC847S  
C1  
B2  
E2  
4
6
5
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07178  
Type  
Marking  
1Ds  
1Ds  
Pin Configuration  
Package  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
BC846S  
BC846U  
BC847S  
1Cs  
2012-04-04  
1

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