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BC847S

更新时间: 2024-11-24 22:53:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
5页 52K
描述
NPN Multi-Chip General Purpose Amplifier

BC847S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-70
包装说明:SC-70, 6 PIN针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.51
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1343275Samacsys Pin Count:6
Samacsys Part Category:TransistorSamacsys Package Category:SOT23 (6-Pin)
Samacsys Footprint Name:SC?88Samacsys Released Date:2019-08-21 03:17:55
Is Samacsys:N最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:45 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC847S 数据手册

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BC847S  
E2  
B2  
C1  
C2  
SC70-6  
Mark: 1C  
B1  
pin #1  
E1  
NOTE: The pinouts are symmetrical; pin 1 and pin  
4 are interchangeable. Units inside the carrier can  
be of either orientation and will not affect the  
functionality of the device.  
NPN Multi-Chip General Purpose Amplifier  
This device is designed for general purpose amplifier applications at collector  
currents to 200 mA. Sourced from Process 07.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
45  
50  
V
V
4
50  
V
6.0  
V
Collector Current - Continuous  
200  
mA  
Operating and Storage Junction Temperature Range  
-55 to +150  
TJ, Tstg  
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BC847S  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
300  
2.4  
415  
mW  
mW/°C  
°C/W  
RθJA  
2001 Fairchild Semiconductor Corporation  
Rev.A1  

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