BC847S

更新时间： 2024-11-28 12:50:03

品牌	Logo	应用领域
WEITRON		晶体小信号双极晶体管
页数	文件大小	规格书
3页	587K
描述
Dual General Purpose Transistor

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中文翻译

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技术参数
数据手册

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BC847S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.31	Is Samacsys：	N
Base Number Matches：	1

BC847S 数据手册

BC847S

Dual General Purpose Transistor

NPN Silicon

P b

Lead(Pb)-Free

SOT -363(SC-88)

NPN+NPN

Maximum Ratings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Unit

Symbol

Value

CEO

CBO

EBO

Collector Current-Continuous

200

Thermal Characteristics

Characteristics

Symbol

Max

Unit

°C

Total Device Dissipation TA=25 C

Junction Temperature

200

+150

-55 to +150

stg

Storage Temperature

°C

Device Marking

BC847S=1C

(TA=25 C Unless Otherwise noted)

Electrical Characteristics

Characteristics

Symbol

Min

Max

Unit

Off Characteristics

Collector-Emitter Breakdown Voltage (I =10mA ,I =0)

V(BR)CEO

V(BR)CBO

V(BR)EBO

Collector-Base Breakdown Voltage

(I =10 µA ,I =0)

Emitter-Base Breakdown Voltage (I =10 µA , I =0)

WEITRON

http://www.weitron.com.tw

05-Feb-07

1/3

12 3

中文翻译

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