Datasheet > BC847S

BC847S

更新时间： 2024-09-25 12:53:55

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描述
Low collector-emitter saturation voltage

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BC847S 数据手册

SMD Type

Product specification

KC847S(BC847S)

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

High current gain

Low collector-emitter saturation voltage

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

1 E1

2 B1

3 C2

4 E2

5 B2

6 C1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

6.0

Collector Current

100

mW/

Total Device Dissipation

300

2.4

Derate above 25

Thermal Resistance, Junction to Ambient

Operating and Storage Junction Temperature Range

415

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

VCBO

VCEO

VEBO

IC = 10 A, IE = 0

IC = 10 mA, IB = 0

6.0

IE = 10 A, IC = 0

VCB = 30 V, IE = 0

Collector-Cutoff Current

DC Current Gain

ICBO

hFE

5.0

VCB = 30 V, IE = 0, TA = 150

IC = 2.0 mA, VCE = 5.0 V

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5.0 mA

IC = 2.0 mA, VCE = 5.0 V

IC = 10 mA, VCE = 5.0 V

VCB = 10 V, f = 1.0 MHz

IC = 20 mA, VCE = 5.0,f = 100 mHz

110

630

0.25

0.65

0.7

Collector-Emitter Saturation Voltage

VCE(sat)

0.58

Base-Emitter ON Voltage

VBE(on)

0.77

Output Capacitance

Transistion frequency

Cob

2.0

MHz

200

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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