生命周期: | Active | 零件包装代码: | DFN |
包装说明: | SMALL OUTLINE, R-PDSO-N6 | 针数: | 6 |
Reach Compliance Code: | compliant | 风险等级: | 1.58 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 45 V | 配置: | SEPARATE, 2 ELEMENTS |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PDSO-N6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 参考标准: | AEC-Q101; IEC-60134 |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC847R | NXP |
获取价格 |
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC847RA | NEXPERIA |
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45 V, 100 mA NPN/NPN general-purpose double transistorsProduction |
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BC847RAPN | NEXPERIA |
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45 V, 100 mA NPN/PNP general-purpose double transistorsProduction |
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BC847RAPNZ | ETC |
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BC847RAPN/SOT1268/DFN1412-6 |
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BC847RAZ | ETC |
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BC847RA/SOT1268/DFN1412-6 |
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BC847R-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC847R-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC847S | SECOS |
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Multi-Chip Transistor |
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BC847S | WEITRON |
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Dual General Purpose Transistor |
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BC847S | TYSEMI |
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Low collector-emitter saturation voltage |
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