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BC847RAZ PDF预览

BC847RAZ

更新时间: 2024-11-28 22:04:19
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
11页 234K
描述
BC847RA/SOT1268/DFN1412-6

BC847RAZ 数据手册

 浏览型号BC847RAZ的Datasheet PDF文件第2页浏览型号BC847RAZ的Datasheet PDF文件第3页浏览型号BC847RAZ的Datasheet PDF文件第4页浏览型号BC847RAZ的Datasheet PDF文件第5页浏览型号BC847RAZ的Datasheet PDF文件第6页浏览型号BC847RAZ的Datasheet PDF文件第7页 
BC847RA  
45 V, 100 mA NPN/NPN general-purpose double transistors  
14 September 2018  
Product data sheet  
1. General description  
NPN/NPN general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268)  
Surface-Mounted Device (SMD) plastic package.  
PNP/PNP complement: BC857RA  
NPN/PNP complement: BC847RAPN  
2. Features and benefits  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.5 mm  
AEC-Q101 qualified  
3. Applications  
General-purpose switching and amplification  
Mobile applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
45  
V
IC  
collector current  
-
-
-
-
100  
200  
450  
mA  
mA  
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C  
-
200  
 
 
 
 

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