Datasheet > BC847S

BC847S

更新时间： 2024-09-27 14:55:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	900K
描述
双极型晶体管

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技术参数
数据手册

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BC847S 技术参数

极性：	NPN×2	Collector-emitter breakdown voltage：	45
Collector Current - Continuous：	0.2	DC current gain - Min：	110
DC current gain - Max：	630	Transition frequency：	200
Package：	SOT-363	Storage Temperature Range：	-55-150
class：	Transistors

BC847S 数据手册

BC847S

Dual NPN Small Signal Surface Mount Transistor

SOT-363

Features

Epitaxial planar die construction.

Ultra-small surface mount package.

Applications

Dual NPN small signal surface mount transistor.

Dimensions in inches and (millimeters)

Ordering Information

Type No.

Marking

Package Code

SOT-363

BC847S

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Power Dissipation

200

300

P_D

Derate above 25℃ 2.4

mW/℃

R_θJA

T_j,T_stg

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

415

℃/W

-55 to+150

℃

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Revision:20170701-P1

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