Datasheet > BC847S

BC847S

更新时间： 2024-01-21 14:16:42

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	639K
描述
Multi-chip transistor (NPN)

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中文翻译

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技术参数
数据手册

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BC847S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
JESD-609代码：	e3	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

BC847S 数据手册

BC847S

Multi-chip transistor (NPN)

SOT-363

APPLICATION

This device is designed for general purpose amplifier applications

Marking :1C

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V^CBO

V^CEO

V^EBO

I^C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Power Dissipation

200

P^D

200

R^θJA

T^j

Thermal Resistance. Junction to Ambient

Junction Temperature

625

℃/W

150

℃

T^stg

Storage Temperature Range

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V^(BR)CBO

I_C=10µA,I_E=0

I_C=1mA,I_B=0

I_E=10µA,I_C=0

V(BR)CEO

V^(BR)EBO

Collector cut-off current

Emitter cut-off current

DC current gain*

ICBO

V_CB=30V,I_E=0

VEB =4V , IC=0

V_CE=5V,I_C=2mA

I_EBO

h_FE

110

630

0.25

0.65

0.7

V^CE(sat)(1)I_C=10mA,I_B=0.5mA

V^CE(sat)(2)I_C=100mA,I_B=5mA

Collector-emitter saturation voltage

Base-emitter voltage

VBE(1)

V^BE(2)

f_T

V_CE=5V,I_C=2mA

0.58

V_CE=5V,I_C=10mA

0.77

Transition frequency

V_CE=5V,I_C=20mA ,f=100MHz

V_CB=10V,I_E=0,f=1MHz

200

MHz

Collector output capacitance

C^ob

*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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