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BAS85-GS08 PDF预览

BAS85-GS08

更新时间: 2024-09-30 06:41:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管小信号肖特基二极管PC
页数 文件大小 规格书
5页 76K
描述
Small Signal Schottky Diode

BAS85-GS08 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:DO-213AA包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.31
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:956916Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Other
Samacsys Footprint Name:MiniMELF (SOD-80)Samacsys Released Date:2019-04-13 12:55:43
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-213AA
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

BAS85-GS08 数据手册

 浏览型号BAS85-GS08的Datasheet PDF文件第2页浏览型号BAS85-GS08的Datasheet PDF文件第3页浏览型号BAS85-GS08的Datasheet PDF文件第4页浏览型号BAS85-GS08的Datasheet PDF文件第5页 
BAS85  
Vishay Semiconductors  
Small Signal Schottky Diode  
Features  
• For general purpose applications  
• This diode features low turn-on voltage  
e2  
• The devices are protected by a PN junc-  
tion guard ring against excessive voltage,  
such as electrostatic discharges  
• This diode is also available in a DO35 case with  
type designation BAT85  
94 9371  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Applications  
Mechanical Data  
• Applications where a very low forward voltage is  
required  
Case: MiniMELF Glass case SOD80  
Weight: approx. 31 mg  
Cathode Band Color: black  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Parts Table  
Part  
Ordering code  
Type Marking  
Remarks  
Tape and Reel  
BAS85  
BAS85-GS18 or BAS85-GS08  
-
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Continuous reverse voltage  
VR  
IF  
30  
V
2001)  
3001)  
6001)  
2001)  
Forward continuous current  
Peak forward current  
Surge forward current  
Power dissipation  
T
amb = 25 °C  
amb = 25 °C  
mA  
mA  
mA  
mW  
T
IFM  
IFSM  
Ptot  
tp < 1 s, Tamb = 25 °C  
amb = 65 °C  
T
1) Valid provided that electrodes are kept at ambient temperature.  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
4301)  
Unit  
K/W  
Thermal resistance junction to  
ambient air  
Junction temperature  
Tj  
125  
°C  
°C  
Storage temperature range  
Tstg  
- 55 to +150  
1) Valid provided that electrodes are kept at ambient temperature.  
Document Number 85510  
Rev. 1.8, 27-Mar-06  
www.vishay.com  
1

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