Datasheet > BAS85-L0L0G

BAS85-L0L0G

更新时间： 2024-12-01 01:14:31

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	192K
描述
Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes

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中文翻译

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数据手册

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BAS85-L0L0G 数据手册

BAS85

Taiwan Semiconductor

CREAT BY ART

Small Signal Product

Hermetically Sealed Glass Fast Switching Schottky Barrier Diodes

FEATURES

- Low forward voltage drop

- Ideal for automated placement

- Hermetically sealed glass

- Compression bonded construction

- All external surfaces are corrosion

resistant and leads are readily solderable

- Solder hot dip tin (Sn) lead finish

MINI MELF

MECHANICAL DATA

- Polarity: Indicated by black cathode band

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power Dissipation

200

Repetitive Peak Reverse Voltage

Maximum DC Blocking Voltage

Average Forward Rectified Current

Peak Forward Surge Current

Operating Junction Temperature

Storage Temperature Range

V_RRM

V_R

200

I_F(AV)

I_FSM

^oC

T_J

125

T_STG

-65 to +125

PARAMETER

MIN

TYP

MAX

SYMBOL

UNIT

I_R=10μA

V_R=25V

B_V

Breakdown Voltage

Reverse Leakage Current

Forward Voltage

I_R

μA

I_F=0.1mA

0.24

0.32

0.40

0.50

0.80

I_F=1.0mA

I_F=10mA

V_F

I_F=30mA

I_F=100mA

(Note 1)

t_rr

Reverse Recovery Time

Junction Capacitance

V_R=1V, f=1.0MHz

C_J

Note 1: Reverse recovery test conditions : I_F=I_R=10mA, R_L=100Ω, I_RR=1mA

Document Number: DS_S1412007

Version: C14

12 3

中文翻译

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