Datasheet > BAS85T

BAS85T

更新时间： 2024-11-10 22:39:15

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
1页	50K
描述
SILICON SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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BAS85T 数据手册

BAS85T-01I

SILICON SCHOTTKY BARRIER DIODE

Features

For general applications

Low turn-on voltage

PN junction guard ring

Min

3.4

Max

3.6

1.40

0.20

1.50

0.40

All dimensions in mm

Mechanical Data

Glass case

Weight: 0.05g (approx)

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_R

Value

Unit

Continuous reverse voltage

Forward continuous current*

Peak forward current *

Surge forward current*

Power dissipation*

I_F

200

300

600

250

125

°C

I_FM

@ t_p= 1s

I_FSM

P_tot

T_j

@ T_A= 65°C

Junction temperature

T_A

Operating temperature range

Storage temperature range

-65 to +125

-65 to +150

°C

T_STG

°C

@ T_j= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse breakdown voltage

V_(BR)R

—

10 µA pulses

* Valid provided that electrodes are kept at ambient temperature.

DIODES INC 3050 East Hillcrest Drive, Westlake Village, CA 91362-3154

TEL: (805) 446-4800 FAX: (805) 446-4850

Document Number: 11004 Revision A- 5

Page 1 of 1

FAX-BACK: (805) 446-4870 www.diodes.com

中文翻译

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