BAS86
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage.
The devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges.
• Metal-on-silicon Schottky barrier device
which is protected by a PN junction guard ring.
94 9371
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• This diode is also available in a DO-35 case with
type designation BAT86.
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
Applications
• Applications where a very low forward voltage is
required
Parts Table
Part
Ordering code
Type marking
-
Remarks
BAS86
BAS86-GS18 or BAS86-GS08
Tape and reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
Value
50
Unit
V
VR
IF
Continuous reverse voltage
Forward continuous current
Repetitive peak forward current
200 1)
500 1)
200 1)
mA
tp < 1 s, ν ≤ 0.5
IFRM
Ptot
mA
Power dissipation1)
mW
1) Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
Unit
K/W
°C
Thermal resistance junction to
ambient air
300 1)
125
Tj
Junction temperature
Ambient operating temperature
range
Tamb
Tstg
- 65 to + 125
- 65 to +150
°C
Storage temperature range
°C
1) Valid provided that electrodes are kept at ambient temperature
Document Number 85511
Rev. 1.8, 13-Jan-11
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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