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BAS86-TP PDF预览

BAS86-TP

更新时间: 2024-11-05 13:05:51
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
3页 712K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, MINIMELF-2

BAS86-TP 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.69Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-LELF-R2湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:125 °C最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS86-TP 数据手册

 浏览型号BAS86-TP的Datasheet PDF文件第2页浏览型号BAS86-TP的Datasheet PDF文件第3页 
M C C  
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20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
BAS86  
Micro Commercial Components  
Features  
Moisture Sensitivity Level 1  
This diode features low turn-on voltage  
The devices are protected by a PN junction guard ring against  
excessive voltage, such as electrostatic discharges  
This diode is also available in a DO-35 case with type designation  
200mW  
Small Signal Schottky  
Barrier Diodes  
50 Volts  
BAT86  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Maximum Ratings  
MINIMELF  
Rating  
Rating  
50  
Unit  
V
mA  
mA  
Symbol  
VR  
Continuous Reverse Voltage  
Forward DC Current at Tamb=25  
IF  
200(2)  
500(2)  
Repetitive Peak Forward Current tp<1s,Tamb=25℃  
IFRM  
Power Dissipation at Tamb=65℃  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
Ptot  
RJA  
TJ  
200(2)  
mW  
/W  
Cathode Mark  
300(2)  
125  
TSTG  
Storage Temperature  
-65 to +150  
C
O
Electrical Characteristics @ 25 C Unless Otherwise Specified  
B
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
Reverse Breakdown Voltage  
(IR=10µAdc Pulsed)  
Forward Voltage  
V(BR)R  
50  
---  
---  
V
A
IF=0.1mA, Pulse test tp<300μs  
IF=1.0mA, Pulse test tp<300μs  
IF=10mA, Pulse test tp<300μs  
IF=30mA, Pulse test tp<300μs  
IF=100mA, Pulse test tp<300μs  
---  
---  
---  
---  
---  
0.200  
0.275  
0.365  
0.460  
0.700  
0.300  
0.380  
0.450  
0.600  
0.900  
VF  
V
DIMENSIONS  
Leakage Current  
INCHES  
MIN  
.130  
.008  
.055  
MM  
MIN  
IR  
Ctot  
trr  
---  
---  
---  
0.2  
---  
0.5  
8
µA  
pF  
ns  
(VR=40Vdc)  
Capacitance  
(VR=1.0V, f=1.0MHz)  
Reverse Recovery Time  
(IF=10mA, IR=10mA, Irr=1.0mA)  
DIM  
A
B
MAX  
.146  
.016  
.059  
MAX  
3.70  
.40  
NOTE  
3.30  
.20  
C
1.40  
1.50  
---  
5.0  
Notes:1. Lead in Glass Exemption Applied, see EU Directive Annex 5.  
2. Valid provided that electrodes are kept at ambient temperature  
SUGGESTED SOLDER  
PAD LAYOUT  
0.105  
0.075”  
0.030”  
www.mccsemi.com  
Revision: A  
2011/09/16  
1 of 3  

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