BAS86-M
Vishay Semiconductors
www.vishay.com
Small Signal Schottky Diode
FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
APPLICATIONS
• Applications where a very low forward voltage is required
Cathode band color: black
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
REMARKS
BAS86-M
BAS85-M-18 or BAS86-M-08
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
50
UNIT
Continuous reverse voltage
Forward continuous current (1)
Repetitive peak forward current (1)
Power dissipation (1)
VR
IF
V
200
mA
mA
mW
tp ≤ 1 s, δ ≤ 0.5
IFRM
Ptot
500
200
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air (1)
Junction temperature
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
UNIT
K/W
°C
300
125
Ambient operating temperature range
Storage temperature range
Tamb
TS
-65 to +125
-65 to +150
°C
°C
Note
(1)
Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
Leakage current
I
R = 10 μA (pulsed)
V(BR)
IR
50
V
VR = 40 V
5
μA
mV
mV
mV
mV
mV
pF
Pulse test tp < 300 μs, IF = 0.1 mA, δ < 2 %
Pulse test tp < 300 μs, IF = 1 mA, δ < 2 %
Pulse test tp < 300 μs, IF = 10 mA, δ < 2 %
Pulse test tp < 300 μs, IF = 30 mA, δ < 2 %
Pulse test tp < 300 μs, IF = 100 mA, δ < 2 %
VR = 1 V, f = 1 MHz
VF
VF
VF
VF
VF
CD
trr
200
275
365
460
700
300
380
450
600
900
8
Forward voltage
Diode capacitance
Reverse recovery time
IF = 10 mA, IR = 10 mA, iR = 1 mA
5
ns
Rev. 1.2, 02-Jun-17
Document Number: 83402
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000