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BAS86-M-18 PDF预览

BAS86-M-18

更新时间: 2024-12-01 22:04:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 83K
描述
DIODE SCHOTTKY 50V 200MA SOD80

BAS86-M-18 数据手册

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BAS86-M  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• For general purpose applications  
• This diode features low turn-on voltage. The  
devices are protected by a PN junction guard  
ring against excessive voltage, such as  
electrostatic discharges  
• Metal-on-silicon Schottky barrier device which  
is protected by a PN junction guard ring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast switching  
and low logic level applications  
DESIGN SUPPORT TOOLS click logo to get started  
Models  
Available  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: MiniMELF (SOD-80)  
Weight: approx. 31 mg  
APPLICATIONS  
• Applications where a very low forward voltage is required  
Cathode band color: black  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/2.5K per 7" reel (8 mm tape), 12.5K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
REMARKS  
BAS86-M  
BAS85-M-18 or BAS86-M-08  
Single  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
50  
UNIT  
Continuous reverse voltage  
Forward continuous current (1)  
Repetitive peak forward current (1)  
Power dissipation (1)  
VR  
IF  
V
200  
mA  
mA  
mW  
tp 1 s, δ ≤ 0.5  
IFRM  
Ptot  
500  
200  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
Junction temperature  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
UNIT  
K/W  
°C  
300  
125  
Ambient operating temperature range  
Storage temperature range  
Tamb  
TS  
-65 to +125  
-65 to +150  
°C  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Reverse breakdown voltage  
Leakage current  
I
R = 10 μA (pulsed)  
V(BR)  
IR  
50  
V
VR = 40 V  
5
μA  
mV  
mV  
mV  
mV  
mV  
pF  
Pulse test tp < 300 μs, IF = 0.1 mA, δ < 2 %  
Pulse test tp < 300 μs, IF = 1 mA, δ < 2 %  
Pulse test tp < 300 μs, IF = 10 mA, δ < 2 %  
Pulse test tp < 300 μs, IF = 30 mA, δ < 2 %  
Pulse test tp < 300 μs, IF = 100 mA, δ < 2 %  
VR = 1 V, f = 1 MHz  
VF  
VF  
VF  
VF  
VF  
CD  
trr  
200  
275  
365  
460  
700  
300  
380  
450  
600  
900  
8
Forward voltage  
Diode capacitance  
Reverse recovery time  
IF = 10 mA, IR = 10 mA, iR = 1 mA  
5
ns  
Rev. 1.2, 02-Jun-17  
Document Number: 83402  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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