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BAS86-M-08 PDF预览

BAS86-M-08

更新时间： 2024-12-01 14:49:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 77K
描述
SCHOTTKY DIODES SOD80 MINIMELF-E2-M

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中文翻译

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BAS86-M-08 技术参数

生命周期：Active零件包装代码：MELF
包装说明：O-LELF-R2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.70风险等级：5.7
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.3 VJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
最高工作温度：125 °C最大输出电流：0.2 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：0.2 W认证状态：Not Qualified
最大重复峰值反向电压：50 V最大反向恢复时间：0.005 µs
子类别：Rectifier Diodes表面贴装：YES
技术：SCHOTTKY端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

BAS86-M-08 数据手册

 浏览型号BAS86-M-08的Datasheet PDF文件第2页浏览型号BAS86-M-08的Datasheet PDF文件第3页浏览型号BAS86-M-08的Datasheet PDF文件第4页 
BAS86-M  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• For general purpose applications  
• This diode features low turn-on voltage. The  
devices are protected by a PN junction guard  
ring against excessive voltage, such as  
electrostatic discharges  
• Metal-on-silicon Schottky barrier device which  
is protected by a PN junction guard ring  
• The low forward voltage drop and fast switching  
make it ideal for protection of MOS devices,  
steering, biasing and coupling diodes for fast switching  
and low logic level applications  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: MiniMELF SOD-80  
Weight: approx. 31 mg  
Cathode band color: black  
Packaging codes/options:  
APPLICATIONS  
18/10K per 13" reel (8 mm tape), 10K/box  
08/2.5K per 7" reel (8 mm tape), 12.5K/box  
• Applications where a very low forward voltage is required  
PARTS TABLE  
PART  
ORDERING CODE  
BAS85-M-18 or BAS86-M-08  
INTERNAL CONSTRUCTION  
REMARKS  
BAS86-M  
Single diode  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
50  
UNIT  
Continuous reverse voltage  
Forward continuous current (1)  
Repetitive peak forward current (1)  
Power dissipation (1)  
VR  
IF  
V
200  
mA  
mA  
mW  
tp 1 s,   0.5  
IFRM  
Ptot  
500  
200  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
UNIT  
K/W  
°C  
300  
Junction temperature  
125  
Ambient operating temperature range  
Storage temperature range  
Tamb  
TS  
- 65 to + 125  
- 65 to + 150  
°C  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
R = 10 μA (pulsed)  
R = 40 V  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
Reverse breakdown voltage  
Leakage current  
I
V(BR)  
IR  
50  
V
V
5
μA  
mV  
mV  
mV  
mV  
mV  
pF  
Pulse test tp < 300 μs, IF = 0.1 mA, < 2 %  
Pulse test tp < 300 μs, IF = 1 mA, < 2 %  
Pulse test tp < 300 μs, IF = 10 mA, < 2 %  
Pulse test tp < 300 μs, IF = 30 mA, < 2 %  
Pulse test tp < 300 μs, IF = 100 mA, < 2 %  
VF  
VF  
VF  
VF  
VF  
CD  
trr  
200  
275  
365  
460  
700  
300  
380  
450  
600  
900  
8
Forward voltage  
Diode capacitance  
VR = 1 V, f = 1 MHz  
Reverse recovery time  
IF = 10 mA, IR = 10 mA, iR = 1 mA  
5
ns  
Rev. 1.1, 21-Jan-13  
Document Number: 83402  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

中文翻译

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